H2N6668 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6754-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
H2N6668
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6668 is designed for general-purpose amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... -80 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-80
-
*BVCEO
-80
-
IEBO
-
-
ICEO
-
-
ICEV
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)1
-
-
VBE(on)2
-
-
*hFE1
1
-
*hFE2
100
-
Max.
-
-
-100
-1
-300
-2
-3
-2.8
-4.5
20
-
Unit
Test Conditions
V
IC=-10mA
V
IC=-200mA
mA VEB=-5V
mA VCE=-80V
uA VCE=-80V, VBE(off)=-1.5V
V
IC=-5A, IB=-10mA
V
IC=-10A, IB=-100mA
V
IC=-5A, VCE=-3V
V
IC=-10A, VCE=-3V
K
IC=-5A, VCE=-3V
IC=-10A, VCE=-3V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification