H2N6520 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 1/3
H2N6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• The H2N6520 is complementary to H2N6517
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics (Ta=25°C, *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% )
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
VBE(on)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-350
-350
-5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=-100uA, IE=0
-
-
V
IC=-1mA, IB=0
-
-
V
IE=-10uA, IC=0
-
-50
nA VCB=-250V, IE=0
-
-50
nA VEB=-4V, IC=0
-
-0.30
V
IC=-10mA, IB=-1mA
-
-0.35
V
IC=-20mA, IB=-2mA
-
-0.50
V
IC=-30mA, IB=-3mA
-
-1
V
IC=-50mA, IB=-5mA
-
2
V
IC=-100mA, VCE=-10V
-
-0.75
V
IC=-10mA, IB=-1mA
-
-0.85
V
IC=-20mA, IB=-2mA
-
-0.90
V
IC=-30mA, IB=-3mA
-
-
VCE=-10V, IC=-1mA
-
-
VCE=-10V, IC=-10mA
-
200
VCE=-10V, IC=-30mA
-
200
VCE=-10V, IC=-50mA
-
-
VCE=-10V, IC=-100mA
-
200
MHz IC=-10mA, VCE=-20V, f=20MHz
-
6
pF VCB=-20V, f=1MHz, IE=0
HSMC Product Specification