H2N6426 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
H2N6426
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Spec. No. : HE6232-B
Issued Date : 1998.01.09
Revised Date : 2000.09.15
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
BVCEO Collector to Emitter Voltage................................................................................... 40 V
BVCBO Collector to Base Voltage ...................................................................................... 40 V
BVEBO Emitter to Base Voltage ......................................................................................... 12 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
40
-
BVCBO
40
-
BVEBO
12
-
ICEO
-
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
0.71
*VCE(sat)2
-
0.9
*VBE(sat)
-
1.52
VBE(on)
-
1.24
*hFE1
20
-
*hFE2
30
-
*hFE3
20
-
Cob
-
5.4
Max.
-
-
-
1.0
50
50
1.2
1.5
2.0
1.75
200
300
200
7.0
Unit
Test Conditions
V
IC=10mA, IB=0
V
IC=100uA, IE=0
V
IE=10uA, IC=0
uA VEB=25V, IB=0
nA VCB=30V, IE=0
nA VEB=10V, IC=0
V
IC=50mA, IB=0.5mA
V
IC=500mA, IB=0.5mA
V
IC=500mA, IB=0.5mA
V
VCE=5V, IC=50mA
K
VCE=5V, IC=10mA
K
VCE=5V, IC=100mA
K
VCE=5V, IC=500mA
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification