H2N5089 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
H2N5089
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor.
Spec. No. : HE6273-B
Issued Date : 1993.12.08
Revised Date : 2000.09.15
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCEO Collector to Emitter Voltage ..................................................................................... 25 V
VEBO Emitter to Base Voltage .......................................................................................... 4.5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
30
-
BVCEO
25
-
BVEBO
4.5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
400
-
*hFE2
450
-
*hFE3
400
-
fT
50
-
Cob
-
-
Max.
-
-
-
50
100
0.5
0.8
1200
-
-
-
4.0
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
pF
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=15V, IE=0
VEB=4.5V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=5V
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=20MHz
VCB=5V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification