H2N5088 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6227-B
Issued Date : 1993.04.12
Revised Date : 2000.09.15
Page No. : 1/3
H2N5088
NPN EPITAXIAL PLANAR TRANSISTOR
Description
This device was designed for low noise, high gain , general purpose
amplifier applications for 1uA to 25mA collector current.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 35 V
VCEO Collector to Emitter Voltage ..................................................................................... 30 V
VEBO Emitter to Base Voltage .......................................................................................... 4.5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
35
-
BVCEO
30
-
BVEBO
4.5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
300
-
*hFE2
350
-
*hFE3
300
-
fT
50
-
Cob
-
-
Max.
-
-
-
50
50
0.5
0.8
900
-
-
-
4.0
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
pF
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=3V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=5V
VCE=5V, IC=0.1mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=0.5mA, f=100MHz
VCB=5V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification