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H2N4403 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6221
Issued Date : 1992.09.30
Revised Date : 2002.02.22
Page No. : 1/4
H2N4403
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4403 is designed for general purpose switching and amplifier
applications.
Features
• Complementary to H2N4401
• High Power Dissipation : 625mW at 25°C
• High DC Current Gain : 100-300 at 150mA
• High Breakdown Voltage : 40V Min.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage ................................................................................................ -40 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current .................................................................................................................. -600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-40
-40
-5
-
-
-
-750
-
30
60
100
100
20
200
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=-100uA, IE=0
-
-
V
IC=-1mA. IB=0
-
-
V
IE=-10uA, IC=0
-
-100
nA VCE=-35V, VBE=-0.4V
-
-400
mV IC=-150mA, IB=-15mA
-
-750
mV IC=-500mA, IB=-50mA
-
-950
mV IC=-150mA, IB=-15mA
-
-1.3
V
IC=-500mA, IB=-50mA
-
-
VCE=-1V, IC=-0.1mA
-
-
VCE=-1V, IC=-1mA
-
-
VCE=-1V, IC=-10mA
-
300
VCE=-2V, IC=-150mA
-
-
VCE=-2V, IC=-500mA
-
-
MHz IC=-20mA, VCE=-10V, f=100MHz
-
8.5
PF VCE=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE4
Rank
Range
A
100-210
B
190-300
H2N4403
HSMC Product Specification