H2N4401 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 1/4
H2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4401 is designed for general purpose switching and amplifier
applications.
Features
• Complementary to H2N4403
• High Power Dissipation : 625 mW at 25°C
• High DC Current Gain : 100-300 at 150mA
• High Breakdown Voltage : 40 V Min.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).............................................................................................625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage .................................................................................................... 60 V
VCEO Collector to Emitter Voltage ................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
Typ.
Max.
Unit
Test Conditions
60
-
-
V
IC=100uA, IE=0
40
-
-
V
IC=1mA, IB=0
5
-
-
V
IE=10uA, IC=0
-
-
100
nA VCE=35V, VBE=0.4V
-
-
400
mV IC=150mA, IB=15mA
-
-
750
mV IC=500mA, IB=50mA
750
-
950
mV IC=150mA, IB=15mA
-
-
1.2
V
IC=500mA, IB=50mA
20
-
-
VCE=1V, IC=0.1mA
40
-
-
VCE=1V, IC=1mA
80
-
-
VCE=1V, IC=10mA
100
-
300
VCE=1V, IC=150mA
40
-
-
VCE=2V, IC=500mA
250
-
-
MHz VCE=10V, IC=20mA, f=100MHz
-
-
6.5
pF
VCB=5V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE4
Rank
Range
A
100-210
B
190-300
H2N4401
HSMC Product Specification