H2N4126 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6216-B
Issued Date : 1992.09.22
Revised Date : 2000.09.01
Page No. : 1/3
H2N4126
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4126 is designed for general purpose switching and
amplifier applications.
Features
• Complementary to H2N4124
• High Power PT : 625mW at 25°C
• High DC Current Gain hFE : 120-360 at IC=2mA
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage .................................................................................... -25 V
VEBO Emitter to Base Voltage ............................................................................................ -4 V
IC Collector Current ...................................................................................................... -200 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min. Typ.
-25
-
-25
-
-4
-
-
-
-
-
-
-
-
-
120
-
60
-
250
-
-
-
Max.
-
-
-
-50
-50
-400
-950
360
-
-
4.5
Unit
Test Conditions
V
V
V
nA
nA
mV
mV
MHz
pF
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
VBE=-3V, IC=0
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-1V, IC=-2mA
VCE=-1V, IC=-50mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-5V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification