H2N4124 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6240-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 1/3
H2N4124
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4124 is designed for general purpose switching and
amplifier applications.
Features
• Complementary to H2N4126
• Low Collector to Emitter Saturation Voltage
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................. 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCEO Collector to Emitter Voltage ..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ....................................................................................................... 200 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
Max.
30
-
25
-
5.0
-
-
50
-
50
-
0.3
-
950
120
360
60
-
300
-
-
4
Unit
V
V
V
nA
nA
V
mV
MHz
pF
Test Conditions
IC=10uA, IE=0
IC=1mA. IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=3V, IC=0
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=1V, IC=2mA
VCE=1V, IC=50mA
VCE=20V, IC=10mA,, f=100MHz
VCB=5V, IE=0, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification