H2N3906 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6240
Issued Date : 1992.11.25
Revised Date : 2002.04.03
Page No. : 1/4
H2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N3906 is designed for general purpose switching and amplifier
applications.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -40 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-40
-
BVCEO
-40
-
BVEBO
-5
-
ICEX
-
-
*VCE(sat)1 -
-
*VCE(sat)2 -
-
*VBE(sat)1 -650
-
*VBE(sat)2
-
-
*hFE1
60
-
*hFE2
80
-
*hFE3
100
-
*hFE4
60
-
*hFE5
30
-
fT
250
-
Cob
-
-
Max.
-
-
-
-50
-250
-400
-850
-950
-
-
300
-
-
-
4
Unit
V
V
V
nA
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCE=-30V, VBE=-3V
IB=-1mA, IC=-10mA
IB=-5mA, IC=-50mA
IB=-1mA, IC=-10mA
IB=-5mA, IC=-50mA
VCE=-1V, IC=-100uA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
VCE=-20V, IC=-10mA,, f=100MHz
VCB=-5V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
H2N3906
HSMC Product Specification