H2N3904 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2002.04.03
Page No. : 1/4
H2N3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N3904 is designed for general purpose switching and amplifier
applications.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
40
-
BVEBO
6
-
ICEX
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1 650
-
*VBE(sat)2
-
-
*hFE1
40
-
*hFE2
70
-
*hFE3
100
-
*hFE4
60
-
*hFE5
30
-
fT
300
-
Cob
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
Test Conditions
V
V
V
nA
mV
mV
mV
mV
MHz
pF
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCE=30V, VBE=3V
IB=1mA, IC=10mA
IB=5mA, IC=50mA
IB=1mA, IC=10mA
IB=5mA, IC=50mA
VCE=1V, IC=100uA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
IC=10mA, VCE=20V, f=100MHz
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
H2N3904
HSMC Product Specification