H2N3417 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN SILICON TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
H2N3417
NPN SILICON TRANSISTOR
Description
The H2N3417 is a silicon NPN planar epitaxial transistor designed
for small signal general purpose and switching applications.
Spec. No. : HE6267-B
Issued Date : 1992.11.25
Revised Date : 2000.09.01
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCEO Collector to Emitter Voltage ..................................................................................... 50 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
50
-
BVCEO
50
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE
180
-
Max.
-
-
-
100
100
300
850
540
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=1mA, IB=0
V
IE=10uA, IC=0
nA VCB=50V, IE=0
nA VEB=5V, IC=0
mV IB=3mA, IC=50mA
mV IB=3mA, IC=50mA
-
VCE=4.5V, IC=2mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification