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H2585 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6715
Issued Date : 1996.02.01
Revised Date : 2001.05.28
Page No. : 1/3
H2585
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2585 is designed for use in low voltage and low drop out
regulator applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -20 V
VCEO Collector to Emitter Voltage .................................................................................... -15 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................. -5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
*BVCEO
-15
-
BVCBO
-20
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
VBE(on)
-
-
*hFE1
1
-
*hFE2
1
-
Cob
-
-
Max.
-
-
-10
-20
-2
-1.5
-1.5
-2
60
60
100
Unit
Test Conditions
V
IC=-100mA
V
IC=-10mA
uA VCB=-20V
uA VCE=-15V
mA VEB=-5V
V
IC=-3A, IB=-3mA
V
IC=-5A, IB=-5mA
V
IC=-3A, VCE=-1.7V
K
IC=-500mA, VCE=-1.7V
K
IC=-5A, VCE=-1.7V
pF VCB=-10V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
H2585
HSMC Product Specification