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H1N5820 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2002.02.18
Page No. : 1/3
H2584
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2584 is designed for use in low voltage and low dropout
regulator applications.
Absolute Maximum Ratings
TO-220
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -20 V
VCEO Collector to Emitter Voltage..................................................................................... -15 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ........................................................................................................... -10 A
Characteristics (Ta=25°C)
Symbol
*BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
Min.
Typ.
Max.
Unit
Test Conditions
-15
-
-
V IC=-100mA
-
-
-10
uA VCB=-20V
-
-
-20
uA VCE=-15V
-
-
-2
mA VEB=-5V
-
-
-1.5
V IC=-10A, IB=-10mA
-
-
-2
V IC=-5A, VCE=-1.7V
2
-
60
K IC=-500mA, VCE=-1.7V
1
15
60
K IC=-10A, VCE=-1.7V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
H2584
HSMC Product Specification