DB3 Datasheet, PDF (1/2 Pages) STMicroelectronics – TRIGGER DIODES

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 1/2
DB3
TRIGGER DIODES (Package DO-35)
Description
High reliability glass passivation insuring parameter stability and against contamination.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -40 ~ +125 °C
Junction Temperature ........................................................................................... -40 ~ +110 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 150 mW
• Maximum Voltages and Currents
Breakover Voltage .............................................................................................................. 32 V
Breakover Voltage symmetry .............................................................................................. ±3 V
Repetitive peak on-state Current .......................................................................................... 2 A
Characteristics (Ta=25°C)
Symbol
VBO
[ |+VBO| ]-[ |-VBO| ]
IV±I
VO
IBO
tr
IB
Min.
28
-
5
5
-
-
-
Typ.
32
-
-
-
-
1.5
-
Max.
36
±3
-
-
50
-
10
Unit
Test Conditions
V C=22nF
V C=22nF
V I=[ IBO to IF=10mA ]
V
uA C=22nF
uS
uA VB=0.5 VBO max
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification