6N135 Datasheet, PDF (6/16 Pages) Toshiba Semiconductor – IRED & PHOTO IC (DIGITAL LOGIC ISOLATION)

6
Recommended Pb-Free IR Profile
t_p
T_p
T_L ^{217 °C}
260 +0/-5 °C
RAMP-UP
3 °C/SEC. MAX.
T_smax ^{150 - 200 °C}
T_smin
t_s
PREHEAT
t_L
60 to 180 SEC.
TIME WITHIN 5 °C of ACTUAL
PEAK TEMPERATURE
20-40 SEC.
RAMP-DOWN
6 °C/SEC. MAX.
60 to 150 SEC.
25
t 25 °C to PEAK
TIME
NOTES:
THE TIME FROM 25 °C to PEAK TEMPERATURE = 8 MINUTES MAX.
T_smax = 200 °C, T_smin = 150 °C
Regulatory Information
The devices contained in this data
sheet have been approved by the
following organizations:
UL
Recognized under UL 1577,
Component Recognition
Program, File E55361.
CSA
Approved under CSA Component
Acceptance Notice #5, File CA
88324.
IEC/EN/DIN EN 60747-5-2
Approved under
IEC 60747-5-2:1997 + A1:2002
EN 60747-5-2:2001 + A1:2002
DIN EN 60747-5-2 (VDE 0884
Teil 2):2003-01
(HCNW and Option 060 only)
Insulation and Safety Related Specifications
Parameter
Minimum External
Air Gap (External
Clearance)
Minimum External
Tracking (External
Creepage)
Minimum Internal
Plastic Gap
(Internal Clearance)
Minimum Internal
Tracking (Internal
Creepage)
Tracking Resistance
(Comparative
Tracking Index)
Isolation Group
Symbol
L(101)
L(102)
CTI
8-Pin DIP
(300 Mil)
Value
7.1
7.4
0.08
NA
200
IIIa
SO-8
Value
4.9
4.8
0.08
NA
200
IIIa
Widebody
(400 Mil)
Value Units
9.6
mm
10.0
mm
1.0
mm
4.0
mm
200 Volts
IIIa
Conditions
Measured from input terminals
to output terminals, shortest
distance through air.
Measured from input terminals
to output terminals, shortest
distance path along body.
Through insulation distance,
conductor to conductor, usually
the direct distance between the
photoemitter and photodetector
inside the optocoupler cavity.
Measured from input terminals
to output terminals, along
internal cavity.
DIN IEC 112/VDE 0303 Part 1
Material Group
(DIN VDE 0110, 1/89, Table 1)
Option 300 - surface mount classification is Class A in accordance with CECC 00802.