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HCPL3140 Datasheet, PDF (4/16 Pages) Agilent(Hewlett-Packard) – 0.4 Amp Output Current IGBT Gate Drive Optocoupler
Solder Reflow Temperature Profile
Regulatory Information
300
200
100
ROOM
TEMPERATURE
0
0
PREHEATING RATE 3°C + 1°C/–0.5°C/SEC.
REFLOW HEATING RATE 2.5°C ± 0.5°C/SEC.
PEAK
TEMP.
245°C
160°C
150°C
140°C
2.5°C ± 0.5°C/SEC.
3°C + 1°C/–0.5°C
30
SEC.
30
SEC.
PEAK
TEMP.
240°C
PEAK
TEMP.
230°C
SOLDERING
TIME
200°C
PREHEATING TIME
150°C, 90 + 30 SEC.
50
100
50 SEC.
TIGHT
TYPICAL
LOOSE
150
200
250
The HCPL-3140/HCPL-0314 are
pending approval by the
following organizations:
VDE
Approval under VDE 0884/06.92
with VIORM = 630 Vpeak
(HCPL-3140) and 566 Vpeak for
HCPL-0314.
UL
Approval under UL 1577,
component recognition program
up to VISO = 2500 Vrms expected
prior to product release. File
E55361.
TIME (SECONDS)
CSA
Approval under CSA Component
Acceptance Notice #5, File CA
88324 expected prior to product
release.
VDE 0884 Insulation Characteristics (HCPL-3140 Option 060)
Description
Symbol
Characteristic
Unit
Installation classification per DIN VDE 0110/1.89, Table 1
for rated mains voltage ≤ 150 Vrms
for rated mains voltage ≤ 300 Vrms
for rated mains voltage ≤ 600 Vrms
Climatic Classification
I - IV
I - III
I-II
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Maximum Working Insulation Voltage
VIORM
630
Vpeak
Input to Output Test Voltage, Method b*
VIORM x 1.875=VPR, 100% Production Test with
tm=1 sec, Partial discharge < 5 pC
VPR
1181
Vpeak
Input to Output Test Voltage, Method a*
VIORM x 1.5=VPR, Type and Sample Test, tm=60 sec,
Partial discharge < 5 pC
VPR
945
Vpeak
Highest Allowable Overvoltage
(Transient Overvoltage tini = 10 sec)
Safety-limiting values - maximum values allowed in the
event of a failure.
Case Temperature
Input Current**
Output Power**
Insulation Resistance at TS, VIO = 500 V
VIOTM
TS
IS,INPUT
PS, OUTPUT
RS
6000
175
230
600
>109
Vpeak
°C
mA
mW
Ω
* Refer to the optocoupler section of the Isolation and Control Components Designer’s Catalog, under Product Safety Regulations section, (VDE
0884) for a detailed description of Method a and Method b partial discharge test profiles.
** Refer to the following figure for dependence of PS and IS on ambient temperature.
4