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ATF54143 Datasheet, PDF (4/16 Pages) Agilent(Hewlett-Packard) – Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 Typical Performance Curves
0.7
0.6
0.6
0.5
0.4
0.3
3V
4V
0.2
0
20
40
60
80 100
Id (mA)
Figure 6. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
0.5
0.4
0.3
0.2
0.1
3V
4V
0
0
20
40
60
80 100
Id (mA)
Figure 7. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Min NF at 900 MHz.
25
24
23
22
21
20
19
3V
4V
18
0
20
40
60
80 100
Ids (mA)
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
42
37
32
27
22
17
3V
4V
12
0
20
40
60
80 100
Ids (mA)
Figure 10. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
24
22
20
18
16
14
3V
4V
12
0
20
40
60
80 100
Idq (mA)[1]
Figure 12. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
23
22
21
20
19
18
17
3V
4V
16
15
0
20
40
60
80 100
Idq (mA)[1]
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
19
18
17
16
15
14
13
3V
4V
12
0
20
40
60
80 100
Ids (mA)
Figure 8. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
40
35
30
25
20
3V
4V
15
0
20
40
60
80 100
Ids (mA)
Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
35
30
25°C
-40°C
85°C
25
20
15
10
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Notes:
1. Idq represents the quiescent drain current
without RF drive applied. Under low values of
Ids, the application of RF drive will cause Id to
increase substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
4