AT-42070 Datasheet, PDF (4/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Silicon Bipolar Transistor

AT-42070 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 10mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.70 -49
28.5 26.56 154
0.5
.69 -137
21.5 11.85 105
1.0
.69 -165
16.0
6.34 85
1.5
.68 -179
12.7
4.33 72
2.0
.69 169
10.3
3.26 62
2.5
.69 164
8.5
2.64 56
3.0
.70 157
6.9
2.22 48
3.5
.70 151
5.6
1.91 39
4.0
.69 144
4.5
1.68 30
4.5
.68 137
3.5
1.50 22
5.0
.68 128
2.7
1.37 14
5.5
.68 117
2.0
1.26
5
6.0
.70 107
1.2
1.15 -3
dB
-36.0
-29.6
-27.2
-27.4
-25.6
-25.4
-23.8
-22.4
-21.4
-20.4
-19.4
-18.3
-17.6
S₁₂
Mag.
.016
.033
.044
.043
.052
.054
.065
.076
.085
.096
.107
.121
.132
Ang.
77
34
29
37
42
46
52
51
55
49
50
45
44
S₂₂
Mag. Ang.
.91
-18
.50
-41
.40
-44
.38
-48
.37
-54
.37
-55
.39
-63
.41
-71
.43
-77
.46
-83
.48
-87
.48
-91
.48
-98
AT-42070 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 35mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.52 -95
33.4 46.52 139
0.5
.66 -163
23.1 14.33 95
1.0
.67 179
17.3
7.36 80
1.5
.67 169
13.9
4.97 69
2.0
.68 160
11.4
3.74 60
2.5
.69 157
9.6
3.04 55
3.0
.69 151
8.1
2.55 47
3.5
.69 145
6.8
2.20 39
4.0
.68 139
5.7
1.93 20
4.5
.67 132
4.7
1.74 22
5.0
.67 123
4.0
1.59 13
5.5
.67 113
3.2
1.46
5
6.0
.69 103
2.5
1.34 -4
A model for this device is available in the DEVICE MODELS section.
dB
-40.0
-34.4
-29.6
-28.0
-27.3
-23.8
-22.8
-21.4
-20.2
-19.3
-18.0
-17.2
-16.4
S₁₂
Mag.
.010
.019
.033
.040
.053
.065
.072
.086
.097
.109
.126
.138
.152
Ang.
50
46
51
59
59
65
65
59
60
54
50
46
40
S₂₂
Mag. Ang.
.77
-29
.34
-42
.28
-41
.27
-44
.27
-51
.28
-53
.28
-62
.30
-72
.33
-80
.36
-85
.38
-90
.39
-94
.38 -102
AT-42070 Noise Parameters: V_CE = 8 V, I_C = 10 mA
Freq.
GHz
NF_O
dB
Γ_opt
Mag
Ang
0.1
1.0
.05
15
0.5
1.1
.06
75
1.0
1.5
.10
126
2.0
1.9
.23
172
4.0
3.0
.45
-145
R_N/50
0.13
0.13
0.12
0.11
0.17
4-167