AT-42035 Datasheet, PDF (4/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Silicon Bipolar Transistor

AT-42035 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 10mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.72 -46
28.3 26.09 152
0.5
.59 -137
20.9 11.13 102
1.0
.56 -171
15.4
5.91 80
1.5
.56 169
12.1
4.03 67
2.0
.58 155
9.7
3.06 55
2.5
.59 147
8.0
2.50 48
3.0
.61 137
6.5
2.10 38
3.5
.63 128
5.2
1.82 27
4.0
.63 117
4.0
1.60 17
4.5
.63 106
3.1
1.43
7
5.0
.64
93
2.3
1.30 -3
5.5
.67
79
1.5
1.19 -13
6.0
.72
70
0.6
1.07 -23
dB
-37.0
-31.0
-28.2
-26.6
-24.2
-22.6
-20.8
-19.6
-18.0
-16.5
-15.4
-14.3
-13.4
S₁₂
Mag.
.014
.028
.039
.047
.062
.074
.092
.105
.126
.149
.169
.193
.215
Ang.
73
44
47
52
55
61
65
62
57
53
48
41
35
S₂₂
Mag. Ang.
.92
-14
.58
-27
.51
-29
.50
-33
.48
-38
.47
-42
.46
-51
.47
-63
.49
-72
.51
-80
.52
-87
.51
-94
.46 -105
AT-42035 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 35mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.50 -88
33.2 45.64 135
0.5
.52 -164
22.4 13.24 92
1.0
.53 174
16.6
6.75 76
1.5
.53 160
13.1
4.55 64
2.0
.55 148
10.8
3.45 53
2.5
.57 142
9.0
2.81 47
3.0
.59 134
7.5
2.37 37
3.5
.60 125
6.3
2.06 27
4.0
.60 116
5.2
1.81 17
4.5
.60 104
4.2
1.62
7
5.0
.61
92
3.4
1.47 -2
5.5
.64
79
2.6
1.35 -13
6.0
.69
70
1.7
1.21 -23
A model for this device is available in the DEVICE MODELS section.
dB
-42.0
-32.8
-28.2
-25.6
-23.2
-21.6
-20.0
-18.4
-17.0
-16.0
-14.9
-14.1
-13.2
S₁₂
Mag.
.008
.023
.039
.053
.069
.084
.101
.120
.141
.158
.179
.198
.219
Ang.
68
57
63
66
65
67
64
61
57
50
45
37
30
S₂₂
Mag. Ang.
.77
-22
.45
-25
.42
-26
.41
-30
.41
-36
.39
-40
.38
-49
.39
-61
.41
-71
.43
-78
.44
-84
.43
-91
.38 -102
AT-42035 Noise Parameters: V_CE = 8 V, I_C = 10 mA
Freq.
GHz
NF_O
dB
Γ_opt
Mag
Ang
0.1
1.0
.04
10
0.5
1.1
.04
66
1.0
1.3
.07
150
2.0
2.0
.20
-178
4.0
3.0
.51
-110
R_N/50
0.13
0.12
0.12
0.12
0.36
4-162