AT-41486 Datasheet, PDF (4/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41486 Typical Scattering Parameters, Common Emitter,
Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 10mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
S₁₂
dB
Mag.
0.1
.74 -38
28.1 25.46 157
-39.6 .011
0.5
.59 -127
22.0 12.63 107
-30.2 .031
1.0
.56 -168
16.8
6.92 84
-27.7 .041
1.5
.57 169
13.5
4.72 69
-26.2 .049
2.0
.62 152
11.1
3.61 56
-24.8 .058
2.5
.63 142
9.3
2.91 47
-23.4 .068
3.0
.64 130
7.6
2.41 37
-22.2 .078
3.5
.68 122
6.3
2.06 26
-20.6 .093
4.0
.71 113
5.1
1.80 16
-19.5 .106
4.5
.74 105
4.0
1.59
7
-18.0 .125
5.0
.77
99
3.1
1.42 -4
-17.2 .139
5.5
.79
93
2.0
1.27 -13
-16.3 .153
6.0
.81
87
1.1
1.13 -22
-15.4 .170
Ang.
68
47
46
49
43
52
52
51
48
48
43
38
34
S₂₂
Mag. Ang.
.94
-12
.60
-29
.49
-29
.45
-32
.42
-39
.40
-42
.39
-50
.37
-60
.35
-70
.35
-84
.35
-98
.35 -114
.35 -131
AT-41486 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 25mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.50 -75
32.0 40.01 142
0.5
.55 -158
23.2 14.38 97
1.0
.57 177
17.5
7.50 78
1.5
.57 161
14.1
5.07 65
2.0
.59 148
11.5
3.75 53
2.5
.61 139
9.6
3.02 45
3.0
.65 128
8.0
2.52 34
3.5
.70 121
6.7
2.17 24
4.0
.74 113
5.7
1.92 14
4.5
.78 107
4.7
1.72
3
5.0
.78 102
3.7
1.53 -8
5.5
.78
96
2.7
1.36 -19
6.0
.76
91
1.6
1.21 -29
A model for this device is available in the DEVICE MODELS section.
dB
-41.3
-34.1
-29.9
-27.3
-24.8
-22.9
-21.6
-20.1
-18.8
-17.6
-16.6
-15.4
-14.5
S₁₂
Mag.
.009
.020
.032
.043
.058
.072
.083
.099
.115
.132
.149
.169
.188
Ang.
54
48
61
62
59
58
57
56
52
47
42
36
31
S₂₂
Mag. Ang.
.85
-17
.51
-24
.46
-24
.44
-28
.43
-35
.40
-41
.38
-49
.36
-59
.34
-72
.32
-87
.31 -106
.31 -125
.33 -144
AT-41486 Noise Parameters: V_CE = 8 V, I_C = 10 mA
Freq.
GHz
NF_O
dB
Γ_opt
Mag
Ang
0.1
1.3
.12
3
0.5
1.3
.10
16
1.0
1.4
.04
43
2.0
1.7
.12
-145
4.0
3.0
.44
-99
R_N/50
0.17
0.17
0.16
0.16
0.40
4-132