AT-41435 Datasheet, PDF (4/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41435 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 10mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.80 -32
28.0 24.99 157
0.5
.50 -110
21.8 12.30 108
1.0
.40 -152
16.6
6.73 85
1.5
.38 -176
13.3
4.63 71
2.0
.39 166
11.0
3.54 60
2.5
.41 156
9.3
2.91 53
3.0
.44 145
7.9
2.47 43
3.5
.46 137
6.7
2.15 33
4.0
.46 127
5.6
1.91 23
4.5
.47 116
4.7
1.72 13
5.0
.49 104
4.0
1.58
3
5.5
.52
91
3.3
1.45 -7
6.0
.59
81
2.5
1.34 -17
dB
-39.2
-29.6
-26.2
-24.0
-21.9
-20.4
-18.8
-17.5
-16.0
-15.0
-13.9
-13.0
-12.1
S₁₂
Mag.
.011
.033
.049
.063
.080
.095
.115
.133
.153
.178
.201
.224
.247
Ang.
82
52
56
59
58
61
61
58
53
50
47
40
36
S₂₂
Mag. Ang.
.93
-12
.61
-28
.51
-30
.48
-32
.46
-37
.44
-40
.43
-48
.43
-58
.45
-68
.46
-75
.48
-82
.47
-89
.43 -101
AT-41435 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 25mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
0.1
.63 -50
31.8 39.08 146
0.5
.39 -137
22.9 13.97 99
1.0
.36 -171
17.2
7.28 80
1.5
.36 171
13.9
4.94 68
2.0
.38 156
11.5
3.76 58
2.5
.40 149
9.8
3.08 52
3.0
.43 140
8.3
2.61 43
3.5
.45 132
7.2
2.28 33
4.0
.46 122
6.1
2.02 23
4.5
.46 112
5.2
1.82 14
5.0
.47 101
4.4
1.66
4
5.5
.51
89
3.7
1.54 -5
6.0
.58
79
3.0
1.41 -15
A model for this device is available in the DEVICE MODELS section.
dB
-40.0
-31.4
-27.1
-23.5
-21.6
-19.6
-18.3
-16.8
-15.6
-14.6
-13.7
-12.6
-11.8
S₁₂
Mag.
.010
.027
.044
.067
.083
.105
.122
.144
.165
.185
.207
.233
.257
Ang.
83
60
67
66
63
63
64
59
55
50
45
39
33
S₂₂
Mag. Ang.
.84
-18
.50
-26
.45
-26
.43
-30
.41
-34
.39
-38
.38
-47
.39
-57
.40
-67
.42
-75
.43
-81
.42
-89
.37 -101
AT-41435 Noise Parameters: V_CE = 8 V, I_C = 10 mA
Freq.
GHz
NF_O
dB
Γ_opt
Mag
Ang
0.1
1.2
.12
3
0.5
1.2
.10
14
1.0
1.3
.05
28
2.0
1.7
.30
-154
4.0
3.0
.54
-118
R_N/50
0.17
0.17
0.17
0.16
0.35
4-117