HSMP-381X Datasheet, PDF (3/9 Pages) Agilent(Hewlett-Packard) – Surface Mount RF PIN Low Distortion Attenuator Diodes

3
Typical
Parameters
at
T
C
=
25°C
Part Number
HSMP-
Series Resistance Carrier Lifetime
R_S (Ω)
τ (ns)
381x
75
1500
Test Conditions
I_F = 1 mA
f = 100 MHz
I_F = 50 mA
I_R = 250 mA
Reverse Recovery Time
T_rr (ns)
300
V_R = 10 V
I_F = 20 mA
90% Recovery
Total Capacitance
C_T (pF)
0.27 @ 50 V
f = 1 MHz
Typical Parameters at T_C = 25°C (unless otherwise noted), Single Diode
0.45
0.40
0.35
1 MHz
0.30
0.25
30 MHz
0.20
frequency>100 MHz
0.15
0 2 4 6 8 10 12 14 16 18 20
REVERSE VOLTAGE (V)
Figure 1. RF Capacitance vs. Reverse
Bias.
10000
1000
T_A = +85°C
T_A = +25°C
T_A = –55°C
100
10
1
0.01
0.1
1
10
100
I_F – FORWARD BIAS CURRENT (mA)
Figure 2. RF Resistance vs. Forward
Bias Current.
120
Diode Mounted as a
110 ^{Series Attenuator}
in a 50 Ohm Microstrip
100 and Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
DIODE RF RESISTANCE (OHMS)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
100
Typical Applications for Multiple Diode Products
10
VARIABLE BIAS
1
0.1
INPUT
0.01
0
125°C 25°C –50°C
0.2 0.4 0.6 0.8 1.0 1.2
V_F – FORWARD VOLTAGE (mA)
Figure 4. Forward Current vs.
Forward Voltage.
FIXED
BIAS
VOLTAGE
RF IN/OUT
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.