HCPL-817 Datasheet, PDF (3/6 Pages) Agilent(Hewlett-Packard) – Phototransistor Optocoupler High Density Mounting Type

Absolute Maximum Ratings (T_A = 25˚C)
Storage Temperature, T_S
Operating Temperature, T_A
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, I_F
Reverse Input Voltage, V_R
Input Power Dissipation, P_I
Collector Current, I_C
Collector-Emitter Voltage, V_CEO
Emitter-Collector Voltage, V_ECO
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, V_iso (AC for 1 minute, R.H. = 40 ~ 60%)
–55˚C to +125˚C
–30˚C to +100˚C
260˚C for 10 s
50 mA
6V
70 mW
50 mA
35 V
6V
150 mW
200 mW
5000 Vrms
Electrical Specifications (T_A = 25˚C)
Parameter
Symbol
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
*Current Transfer Ratio
V_F
I_R
C_t
I_CEO
BV_CEO
BV_ECO
I_C
CTR
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Cut-off Frequency
V_CE(sat)
t_r
t_f
f_c
Isolation Resistance
R_iso
Min.
–
–
–
–
35
6
2.5
50
–
–
–
–
5 x 10¹⁰
Typ.
1.2
–
30
–
–
–
–
–
0.1
4
3
80
1 x 10¹¹
Max.
1.4
10
250
100
–
–
30
600
0.2
18
18
–
–
Floating Capacitance
C_f
–
0.6
1.0
* CTR =
I_C
I_F
x 100%
Units
V
µA
pF
nA
V
V
mA
%
V
µs
µs
KHz
Ω
pF
Test Conditions
I_F = 20 mA
V_R = 4 V
V = 0, f = 1 KHz
V_CE = 20 V
I_C = 0.1 mA
I_E = 10 µA
I_F = 5 mA, V_CE = 5 V,
R_BE = ∞
I_F = 20 mA, I_C = 1 mA
V_CC = 2 V, I_C = 2 mA
R_L = 100 Ω
V_CC = 5 V, I_C = 2 mA
R_L = 100 Ω, –3 dB
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
Rank Mark
L
A
B
C
D
CTR (%)
50 ~ 100
80 ~ 160
130 ~ 260
200 ~ 400
300 ~ 600
Conditions
I_F = 5 mA, V_CE = 5 V, T_A = 25°C
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