AT-64020 Datasheet, PDF (3/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64020 Typical Performance, T_A = 25°C
30
15
29
28
27
150 mA
110 mA
26
70 mA
25
1.0
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain
Compression vs. Frequency and
Collector Current. V_CE = 16 V.
12
9
6
150 mA
110 mA
3
70 mA
1.0
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 2. 1 dB Compressed Gain vs.
Frequency and Collector Current.
V_CE= 16 V.
30
P_OUT
25
20
40
η_T
15
30
10
20
5
10
0
0
0 5 10 15 20 25
POWER IN (dBm)
Figure 3. Output Power and Efficiency
vs. Input Power.
V_CE = 16 V, I_C = 110mA, f = 4.0 GHz.
35
30
25
MSG
20
15
MAG
MSG
10
|S21E|²
5
0
0.1
0.3 0.5 1.0
3.0 5.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V_CE = 16 V, I_C = 110 mA.
Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 16 V,I_C␣ =␣ 110mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
S₁₂
S₂₂
dB
Mag. Ang. Mag. Ang.
0.1
.61 -116
30.0 31.51 130
-33.1 .022 57
.67
-48
0.5
.75 -173
18.4
8.27 86
-28.8 .036 41
.23
-88
1.0
.75 171
12.5
4.23 66
-27.4 .043 49
.20 -100
1.5
.74 159
9.2
2.90 50
-23.5 .067 48
.21 -110
2.0
.74 148
7.0
2.23 35
-21.6 .083 46
.25 -120
2.5
.73 141
5.2
1.82 26
-19.8 .103 47
.27 -127
3.0
.73 130
3.8
1.56 12
-17.5 .133 41
.32 -135
3.5
.74 119
2.7
1.37 -2
-16.1 .157 35
.35 -146
4.0
.73 107
1.8
1.23 -16
-14.7 .186 26
.38 -158
4.5
.72
93
0.9
1.11 -30
-13.3 .217 18
.41 -168
5.0
.71
79
0.1
1.01 -43
-11.8
.256
8
.42 179
A model for this device is available in the DEVICE MODELS section.
4-181