AMMC-5620 Datasheet, PDF (3/9 Pages) AVAGO TECHNOLOGIES LIMITED – 6 - 20 GHz High Gain Amplifier

AMMC-5620 DC Specifications / Physical Properties ^[1]
Symbol
Parameters and Test Conditions
Units Min.
Typical Max.
V_DD
Recommended Drain Supply Voltage
V
5
I_DD
Total Drain Supply Current (V _DD= 5V)
mA
70
95
130
I_DD
Total Drain Supply Current (V_DD= 7 V)
θ _ch-b
Thermal Resistance ^[3]
(Backside temperature (T_b) = 25°C
mA
105
°C/W
33
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θ_ch-b) = 47°C/W at T_channel (T_c) = 150°C as measured using infrared microscopy. Thermal Resistance at backside temperature
(T_b) = 25°C calculated from measured data.
AMMC-5620 RF Specifications ^[3] (Tb = 25°C, V_DD = 5 V, I_DD = 95mA, Zo=50Ω)
Symbol
|S₂₁|²
Gain Slope
Parameters and Test Conditions
Small-signal Gain
Positive Small-signal Gain Slope
Units Min.
dB
16
dB/GHz
RL_in
RL_out
|S₁₂|²
P_-1dB
P_sat
OIP3
Input Return Loss
dB
10
Output Return Loss
dB
10
Reverse Isolation
dB
Output Power at 1dB Gain Compression @ 20 GHz
dBm
12.5
Saturated Output Power (3dB Gain Compression) @ 20 GHz dBm
14.5
Output 3^rd Order Intercept Point @ 20 GHz
dBm
NF
Noise Figure @ 20 GHz
dB
Note:
3.. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
Typical
19
+0.21
13
14
- 55
15
17
23.5
4.2
Max.
22
5.0
2