AMMC-5024 Datasheet, PDF (3/11 Pages) AVAGO TECHNOLOGIES LIMITED – 30 KHz-40GHz Traveling Wave Amplifier

AMMC-5024 DC Specifications/Physical Properties^[1]
Symbol Parameters and Test Conditions
I_dss
V_p
V_g2
I_dsmin
(V_g1)
I_dsmin
(V_g2)
θ_ch-b
Saturated Drain Current (V_dd=7 V, V_g1=0 V, V_g2=open circuit)
First Gate Pinch-off Voltage (V_dd=7 V, I_dd=30 mA, V_g2=open circuit)
Second Gate Self-bias Voltage (V_dd=7 V, I_dd = 200 mA, V_g2=open circuit)
First Gate Minimum Drain Current
(V_dd= 7 V, V_g1 = -7 V, V_g2=open circuit)
Second Gate Minimum Drain Current
(V_dd= 7 V, V_g1 = 0 V, V_g2= -3.5 V)
Thermal Resistance^[2] (Backside temperature, T_b = 25°C)
Units
mA
V
V
mA
mA
°C/W
Min. Typ.
250
304
-8.2
2.75
47
Max.
350
68
105
128
52
RF Specifications for High Power Applications^[3,4] (V_dd=7 V, I_dd(Q)=200 mA, Z_in= Z_o=50Ω
Symbol
|S₂₁|²
∆ |S₂₁|²
RL_in
RL_out
|S₁₂|²
P_-1dB
P_sat
OIP3
NF
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power @ 1 dB Gain Compression
Saturated Output Power
Output 3^rd Order Intercept Point,
Rf_in1 = Rf_in2 = 2 dBm, f = 22 GHz, ∆f = 2 MHz
Noise Figure (V_ds = 3V, I_ds = 140 mA)
f = 22 GHz
f = 22 GHz
f = 26 GHz
f = 40 GHz
Units
dB
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
Min.
14
12
10
26
21
23
27
Typ.
16
±0.75
16.9
16.8
28
22.5
24.5
30
4.6
7.2
Max.
18
±1.5
6.5
9
RF Specifications for High Gain and Low Power Applications^[3,4] (V_dd=4 V, I_dd(Q)=160 mA, Z_in= Z_o=50Ω
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S₂₁|²
∆ |S₂₁|²
Small-signal Gain
Small-signal Gain Flatness
dB
17.5
dB
±1.5
RL_in
Minimum Input Return Loss
dB
13
RL_out
|S₁₂|²
Minimum Output Return Loss
Isolation
dB
13
dB
30
P_-1dB
Output Power @ 1 dB Gain Compression
f = 22 GHz
dBm
17.3
P_sat
Saturated Output Power
f = 22 GHz
dBm
20.5
OIP3
Output 3^rd Order Intercept Point,
dBm
22.5
Rf_in1 = Rf_in2 = 2 dBm, f = 22 GHz, ∆f = 2 MHz
NF
Noise Figure
f = 26 GHz
dB
3.7
f = 40 GHz
dB
5.5
Notes:
1. Backside temperature T_b = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θ_ch-b) = 61°C/W at T_channel (T_c) = 150°C as measured using the liquid crystal method. Thermal Resistance at
backside temperature (T_b) = 25°C calculated from measured data.
3. Data measured in wafer form, T_chuck = 25°C
4. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.
2