MSA-0100 Datasheet, PDF (2/4 Pages) Agilent(Hewlett-Packard) – Cascadable Silicon Bipolar MMIC Amplifier

MSA-0100 Absolute Maximum Ratings
Parameter
Absolute Maximum^[1]
Device Current
40 mA
Power Dissipation^[2,3]
200 mW
RF Input Power
Junction Temperature
Storage Temperature
+20 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_{Mounting Surface} (T_MS) = 25°C.
3. Derate at 22.2 mW/°C for T_MS␣ >␣ 191 °C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θ_jc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance^[2,4]:
θ_jc = 45°C/W
Electrical Specifications^[1], T_A = 25°C
Symbol
GP
∆GP
Parameters and Test Conditions^[2]: I_d = 17 mA, Z_O = 50 Ω
Power Gain (|S21| ²)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 0.7 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
IP3
Third Order Intercept Point
f = 0.5 GHz
tD
Group Delay
f = 0.5 GHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
GHz
dB
dBm
dBm
psec
V
4.5
mV/°C
Typ. Max.
19.0
± 0.6
1.3
1.3:1
1.3:1
5.5
1.5
14.0
150
5.0 5.5
–9.0
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0100-GP4
100
6-243