IAM-81028 Datasheet, PDF (2/4 Pages) Agilent(Hewlett-Packard) – Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amp

Absolute Maximum Ratings
Parameter
Device Voltage
Power Dissipation^[2,3]
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
Absolute
Maximum^[1]
15 V
300 mW
+14 dBm
+14 dBm
200°C
-65°C to 200°C
Thermal Resistance:^[2,4]
θ_jc = 50°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. T_CASE = 25°C.
3. Derate at 20 mW/°C for T_C > 185°C.
4. See MEASUREMENTS section “Thermal
Resistance” in Communications
Components Catalog, for more
information.
Electrical Specifications^[1]
T_A = 25°C
Symbol
Parameters and Test Conditions:
V_CC = 5 V, Z_O = 50 Ω, LO = -5 dBm, RF = -20 dBm
G_C
Conversion Gain
RF = 2 GHz, LO = 1.75 GHz
f_3dBRF
RF Bandwidth
(G_C 3 dB Down)
IF = 250 MHz
f_3dBIF
IF Bandwidth
(G_C 3 dB Down)
LO = 2 GHz
P_1dB
IF Output Power at
1 dB Gain Compression
RF = 2 GHz, LO = 1.75 GHz
Units
dB
GHz
Min.
7.0
Typ. Max.
8.5 10
4.5
GHz
0.6
dBm
-6
IP₃
IF Output Third Order
RF = 2 GHz, LO = 1.75 GHz
dBm
3
Intercept Point
NF
SSB Noise Figure
RF = 2 GHz, LO = 1.75 GHz
dB
17
VSWR RF Port VSWR
f = 0.05 to 5 GHz
1.5:1
LO Port VSWR
f = 0.05 to 5 GHz
1.5:1
IF Port VSWR
f < 1 GHz
1.5:1
RF_if RF Feedthrough at IF Port RF = 2 GHz, LO = 1.75 GHz
LO_if
LO Leakage at IF Port
LO = 1.75 GHz
LO_rf LO Leakage at RF Port
LO = 1.75 GHz
I_CC
Supply Current
dBc
-25
dBm
-25
dBm
-35
mA 10 12.5 16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on the following
page.
7-124