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HMMC-5038 Datasheet, PDF (2/5 Pages) Agilent(Hewlett-Packard) – 38 GHz LNA
DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions
Units Min. Typ.
VD1,2-3-4 Low Noise Drain Supply Operating Voltages
V
2
3
ID1
First Stage Drain Supply Current
(VDD = 3 V, VG1 = -0.8 V)
mA
22
ID2-3-4
Drain Supply Current for Stages 2, 3, and 4 Combined
mA
98
(VDD = 3 V, VGG = -0.8 V)
VG1,2,3-4 Gate Supply Operating Voltages (IDD = 120 mA)
V
-0.8
Vp
Pinch-off Voltage (VDD = 3 V, IDD ≤ 10 mA)
V
-2
-1.2
θch-bs
Thermal Resistance [2]
(Channel-to-Backside @ Tch = 160°C)
°C/W
62
Tch
Channel Temperature[3] (TA = 125°C, MTTF > 106 hrs,
°C
150
VDD = 3 V, IDD = 120 mA)
Notes:
1. Backside ambient operating temperature TA = 25°C unless otherwise noted.
2. Thermal resistance (°C/Watt) at a channel temperature T (°C) can be estimated using the equation:
θ(T) ≅ 62 x [T(°C)+ 273] / [160°C + 273].
3. Derate MTTF by a factor of two for every 8°C above Tch.
Max.
5
-0.8
RF Specifications, TA = 25°C, VDD = 3 V, IDD = 120 mA, Zo = 50 Ω
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
BW
S21
∆ S21
(RLin)MIN
Operating Bandwidth
Small Signal Gain[1]
Small Signal Gain Flatness
Minimum Input Return Loss w/o external
capacitive matching[2]
GHz
37
40
dB
20 23
dB
± 0.5
dB
8
12
(RLout)MIN
S12
P-1dB
NF
Minimum Output Return Loss
Reverse Isolation
Output Power @ 1dB Gain Compression
Noise Figure [3]
dB
dB
dBm
dB
12 18
50
12
4.8
Notes:
1. Gain may be reduced by biasing for lower IDD. Increasing IDD will increase Gain.
2. Minimum input return may be improved by approximately 3 dB by including a small capacitive (~30 fF) stub on the
input transmission line.
3. Noise Figure may be further reduced by optimizing DC bias conditions.
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