AT-42000 Datasheet, PDF (2/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Medium Power Up to 6 GHz Medium Power

AT-42000 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation ^[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum^[1]
1.5
20
12
80
600
200
-65 to 200
Part Number Ordering Information
Part Number
Devices Per Tray
AT-42000-GP4
100
Thermal Resistance^[2,4]:
θ_jc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T_{Mounting Surface} = 25°C.
3. Derate at 14.3 mW/°C for
T_{Mounting Surface} > 158°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θ_jc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions^[1]
|S_21E|² Insertion Power Gain; V_CE = 8 V, I_C = 35 mA
Units Min. Typ. Max.
f = 2.0 GHz dB
11.5
f = 4.0 GHz
5.5
P_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 8 V, I_C = 35 mA
f = 2.0 GHz dBm
21.0
f= 4.0 GHz
20.5
G_{1 dB} 1 dB Compressed Gain; V_CE = 8 V, I_C = 35 mA
f = 2.0 GHz dB
15.0
f = 4.0 GHz
10.0
NF_O Optimum Noise Figure: V_CE = 8 V, I_C = 10 mA
f = 2.0 GHz dB
1.9
f = 4.0 GHz
3.0
G_A
Gain @ NFO; V_CE = 8 V, IC = 10 mA
f = 2.0 GHz dB
14.0
f = 4.0 GHz
10.5
f_T
Gain Bandwidth Product: V_CE = 8 V, I_C = 35 mA
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 35 mA
I_CBO Collector Cutoff Current; V_CB = 8 V
I_EBO Emitter Cutoff Current; V_EB = 1 V
C_CB
Collector Base Capacitance^[2]: V_CB = 8 V, f = 1 MHz
GHz
9.0
— 30 150 270
µA
0.2
µA
2.0
pF
0.23
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
4-150