AT-41411 Datasheet, PDF (2/5 Pages) Agilent(Hewlett-Packard) – Surface Mount Low Noise Silicon Bipolar Transistor Chip

AT-41411 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation ^[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum^[1]
1.5
20
12
50
225
150
-65 to 150
Thermal Resistance^[2,4]:
θ_jc = 550°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T_CASE = 25°C.
3. Derate at 1.8 mW/°C for T_C > 26°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number
Increment
Comments
AT-41411-TR1
3000
Reel
AT-41411-BLK
100
Bulk
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions^[1]
|S_21E|² Insertion Power Gain; V_CE = 8 V, I_C = 20 mA
P_{1 dB}
G_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 8 V, I_C = 20 mA
1 dB Compressed Gain; V_CE = 8 V, I_C = 20 mA
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
Units
dB
dBm
Min.
14.5
Typ.
16.5
11.0
17.0
Max.
f = 2.0 GHz dB
13.0
NF_O Optimum Noise Figure: V_CE = 8 V, I_C = 10 mA
G_A
Gain @ NFO; V_CE = 8 V, IC = 10 mA
f = 1.0 GHz dB
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz dB
f = 2.0 GHz
f = 4.0 GHz
f_T
Gain Bandwidth Product: V_CE = 8 V, I_C = 20 mA
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 10 mA
I_CBO Collector Cutoff Current; V_CB = 8 V
I_EBO Emitter Cutoff Current; V_EB = 1 V
GHz
— 30
µA
µA
Notes:
1. Refer to PACKAGING Section, “Tape-and-Reel Packaging for Semiconductor Devices.”
1.4
1.8
3.5
18.0
13.0
9.0
7.0
150 270
0.2
1.0
4-110