AMMC-5023 Datasheet, PDF (2/9 Pages) Agilent(Hewlett-Packard) – 23 GHz Low Noise Amplifier (21.2-26.5 GHz)

AMMC-5023 DC Specifications/Physical Properties^[1]
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
V_D1, V_D2
Recommended Drain Supply Voltage
V
3
5
7
V_G1, V_G2
Gate Supply Voltage^[2] (V_D1 ≤ V_D1(max), V_D2 ≤ V_D2(max))
V
0.8
I_D1, I_D2
Input and Output Stage Drain Supply Current (V_G1 = V_G2 = Open, V_D1 = V_D2 = 5 V)
mA
14
I_D1+I_D2
Total Drain Supply Current (V_G1 = V_G2 = Open, V_D1 = V_D2 = 5 V)
mA
13
28
35
θ_ch-b
Thermal Resistance^[3] (Backside temperature, T_b = 25°C)
°C/W
44
Notes:
1. Backside ambient operating temperature T_A = 25°C unless otherwise noted.
2. Open circuit voltage at V_G1 and V_G2 when V_D1 and V_D2 are 5 Volts.
3. Channel-to-backside Thermal Resistance (θ_ch-b) = 66°C/W at T_channel (T_c) = 150°C as measured using the liquid crystal method. Thermal Resistance at
backside temperature (T_b) = 25°C calculated from measured data.
RF Specifications^[4] (V_G1 = V_G2 = Open, V_D1 = V_D2 = 5V, I_D1 + I_D2 = 28 mA, Z_in = Z₀ = 50Ω)
Symbol
Parameters and Test Conditions
Units
21.2– 23.6 GHz
Min. Typ. Max.
|S₂₁|²
∆ |S₂₁|²
RL_in
RL_out
|S₁₂|²
P_-1dB
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power @ 1 dB Gain Compression
f = 23 GHz
dB
21
23.6 28
dB
±1.5
dB
10
12
dB
9
12
dB
40
50
dBm
9.5
P_sat
Saturated Output Power
dBm
(@ 3 dB Gain Compression)
OIP3
Output 3^rd Order Intercept Point,
22.4 GHz
dB
Rf_in1 = Rf_in2 = -20 dBm, ∆f = 2 MHz
25.5 GHz
NF
Noise Figure
22 GHz
dB
25 GHz
10.5
18
2.3 2.8
Note:
4. 100% on-wafer RF test is done at frequency = 21.2, 22.4, 23.6, 24.5, 25.5 and 26.5 GHz, except as noted.
24.5– 26.5 GHz
Min. Typ. Max.
17
19
25
±1.2
10
11.5
10
17
40
43
10
11.5
24
2.3 2.8
2