ATF34143 Datasheet, PDF (12/15 Pages) Agilent(Hewlett-Packard) – Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1 – 6.0 GHz
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
GATE_IN
L
L=Lc
LOSSYL
L=Lb
R=Rb
C C=Ca
SOURCE
L
L=La
LOSSYL
L=Lb
R=Rb
R
R=0.1 OH
D
G
S
LOSSYL
L=Lb
R=Rb
LOSSYL
L=Lb
R=Rb
C=Cb
L
L=La*.5
C
LOSSYL
L=Lb
R=Rb
L
L=Ld
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
SOURCE
DRAIN_OUT
ATF-34143 Die Model
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
* STATZ MESFET MODEL *
MODEL = FET
Gate model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Parasitics
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Breakdown
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Model scal factors (W=FET width in microns)
E QUAT I O N C d s = 0 . 0 1 _* W / 2 0 0
E QUAT I O N B e t a = 0 . 0 6 _* W / 2 0 0
E QUAT I O N R d = 2 0 0 / W
E QUAT I O N R s = . 5 _* 2 0 0 / W
E QUAT I O N C g s = 0 . 2 _* W / 2 0 0
E QUAT I O N C g d = 0 . 0 4 _* W / 2 0 0
E QUAT I O N L g = 0 . 0 3 _* 2 0 0 / W
E QUAT I O N L d = 0 . 0 3 _* 2 0 0 / W
E QUAT I O N L s = 0 . 0 1 _* 2 0 0 / W
E QUAT I O N R c = 5 0 0 _* 2 0 0 / W
NFETMESFET
G
W=800 µm
Noise
FNC=01e+6
R=.17
P=.65
C=.2
D
MODEL=FET
S
S