|
MSA-1100 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – Cascadable Silicon Bipolar MMIC Amplifier | |||
|
Cascadable Silicon Bipolar
MMIC⣠Amplifier
Technical Data
MSA-1100
Features
⢠High Dynamic Range
Cascadable 50⣠⦠or 75⣠â¦
Gain Block
⢠3 dB Bandwidth:
50⣠MHzto1.6⣠GHz
⢠17.5 dBm Typical P1dB at
0.5⣠GHz
⢠12⣠dB Typical 50⣠⦠Gain at
0.5⣠GHz
⢠3.5⣠dB Typical Noise Figure
at 0.5⣠GHz
Description
The MSA-1100 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for high dynamic range
in either 50 or 75⣠⦠systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in industrial and
military systems.
The MSA-series is fabricated using
HPâs 10 GHz fT, 25⣠GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
Chip Outline[1]
3
5
2
1
4
This chip is intended to be used
with an external blocking capaci-
tor completing the shunt feedback
path (closed loop). Data sheet
characterization is given for a
200⣠pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.[1]
Note:
1. Refer to the APPLICATIONS section
âSilicon MMIC Chip Useâ for additional
information.
Typical Biasing Configuration
C Fbk
R bias (Required)
VCC ⥠8 V
RFC (Optional)
4
C block
C block
3
IN
1 MSA
2
Vd = 5.5 V
OUT
5965-9555E
6-450
|
▷ |