MSA-1023 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – Cascadable Silicon Bipolar MMIC Amplifier

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1023
Features
• High Output Power:
+27 dBm Typical P_1dB at 1.0␣ GHz
• Low Distortion:
37 dBm Typical IP₃ at 1.0␣ GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• Hermetic, Metal/Beryllia
Stripline Package
• Impedance Matched to 25 Ω
for Push-Pull Configurations
Description
The MSA-1023 is a high perfor-
mance, medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a hermetic, BeO flange package
for good thermal characteristics.
This MMIC is designed for use in a
push-pull configuration in a 25␣ Ω
system. The MSA-1023 can also be
used as a single-ended amplifier in
a 50␣ Ω system with slightly
reduced performance. Typical
applications include narrow and
broadband RF amplifiers in
industrial and military systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
230 mil BeO Flange
Package
Typical Push-Pull Biasing Configuration
IN
50 Ω
R _bias
C _block
1
1
4
MSA
2
4
MSA
RFC
C _block
3
V_d = 15 V
3
V_CC > 20 V
50 Ω
OUT
C _block
2
C _block
RFC
R _bias
V_CC > 20 V
5965-9554E
6-446