MSA-0900 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – Cascadable Silicon Bipolar MMIC Amplifier

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0900
Features
• Broadband, Minimum Ripple
Cascadable 50 Ω Gain Block
• 8.0 ± 0.2 dB Typical Gain
Flatness from 0.1 to 4.0 GHz
• 3 dB Bandwidth:
0.1to6.0␣ GHz
• Low VSWR:
≤ 1.5:1from0.1to4.0␣ GHz
• 11.5 dBm Typical P_1dB at
1.0␣ GHz
Description
The MSA-0900 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for very wide bandwidth
industrial and military applica-
tions that require flat gain and low
VSWR.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
This chip is intended to be used
with an external blocking capaci-
tor completing the shunt feedback
path (closed loop). Data sheet
characterization is given for a
45␣ pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.^[1]
Chip Outline^[1]
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
Typical Biasing Configuration
C _Fbl
R _bias (Required)
V_CC > 12 V
C _block
IN
4
3
1 ^MSA
2
RFC (Optional)
C _block
V_d = 7.8 V
OUT
5965-9548E
6-430