MSA-0870 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – Cascadable Silicon Bipolar MMIC Amplifier

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0870
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
23.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.0␣ dB Typical at 1.0␣ GHz
• Hermetic Gold-ceramic
Microstrip Package
Description
The MSA-0870 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
purpose 50 Ω gain block above
0.5␣ GHz and can be used as a high
gain transistor below this fre-
quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in industrial
and military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
70 mil Package
Typical Biasing Configuration
R _bias
V_CC > 10 V
C _block
IN
4
3
1 ^MSA
2
RFC (Optional)
C _block
V_d = 7.8 V
OUT
5965-9544E
6-418