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MSA-0835 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – Cascadable Silicon Bipolar MMIC Amplifiers | |||
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Cascadable Silicon Bipolar
MMIC⣠Amplifiers
Technical Data
MSA-0835, -0836
Features
⢠Usable Gain to 6.0⣠GHz
⢠High Gain:
32.5 dB Typical at 0.1⣠GHz
23.0 dB Typical at 1.0⣠GHz
⢠Low Noise Figure:
3.0⣠dB Typical at 1.0⣠GHz
⢠Cost Effective Ceramic
Microstrip Package
Description
The MSA-0835 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 ⦠gain block above
0.5⣠GHz and can be used as a high
gain transistor below this fre-
quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial
and industrial applications.
35 micro-X Package[1]
The MSA-series is fabricated using
HPâs 10 GHz fT, 25⣠GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Note:
1. Short leaded 36 package available
upon request.
Available in cut lead version
(package⣠36) as MSA-0836.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
4
3
1 MSA
2
RFC (Optional)
C block
Vd = 7.8 V
OUT
5965-9596E
6-414
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