INA-30311 Datasheet, PDF (1/6 Pages) Agilent(Hewlett-Packard) – 1 GHz Low Noise Silicon MMIC Amplifier

1 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-30311
Features
• Internally Biased, Single 3 V
Supply (6 mA)
• 3.5 dB NF
• 13 dB Gain
• Unconditionally Stable
SOT-143 Surface Mount
Package
Applications
• LNA or IF Amplifier for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM, and
Wireless LAN Applications
Pin Connections and
Package Marking
INPUT
GND
V_CC
OUTPUT
Equivalent Circuit (Simplified)
V_CC
RF
INPUT
RF
OUTPUT
GROUND
Description
Hewlett-Packard’s INA-30311 is a
Silicon monolithic amplifier for
applications to 1.0 GHz. Packaged
in a miniature SOT-143 package,
it requires very little board space.
The INA-30311 uses an internally
biased topology which eliminates
the need for external components
and provides decreased sensitiv-
ity to ground inductance.
The INA-30311 is designed with
an output impedance that varies
from near 200 Ω at low
frequencies to near 50 Ω at higher
frequencies. This provides a
matching advantage for IF
circuits, as well as improved
power efficiency, making it
suitable for battery powered
designs.
The INA-30311 is fabricated using
HP’s 30 GHz f_MAX ISOSAT^TM
Silicon bipolar process which
uses nitride self-alignment sub-
micrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
5963-6679E
6-140