INA-12063 Datasheet, PDF (1/24 Pages) Agilent(Hewlett-Packard) – 1.5 GHz Low Noise Self-Biased Transistor Amplifier

1.5 GHz Low Noise Self-Biased
Transistor Amplifier
Technical Data
INA-12063
Features
• Integrated, Active Bias
Circuit
• Single Positive Supply
Voltage (1.5 – 5V)
• Current Adjustable, 1 to
10mA
• 2 dB Noise Figure at
900␣ MHz
• 16 dB Gain at 900 MHz
25 dB Gain at 100 MHz
Applications
• Amplifier Applications for
Cellular, Cordless, Special
Mobile Radio, PCS, ISM,
and Wireless LAN
Applications
Equivalent Circuit
(Simplified)
V_d
GND 2
ACTIVE
BIAS
CIRCUIT
RF
INPUT
RF
FEEDBACK
NETWORK
GND 1
I_bias
RF
OUTPUT
and V_c
Surface Mount Package
SOT-363 (SC-70)
Description
Hewlett-Packard’s INA-12063 is a
Silicon monolithic self-biased
transistor amplifier that offers
excellent gain and noise figure for
applications to 1.5 GHz. Packaged
in an ultra-miniature SOT-363
package, it requires half the board
space of a SOT-143 package.
Pin Connections and
Package Marking
Ibias 1
GND 2 2
RF INPUT 3
6
RF OUTPUT
and VC
5 GND 1
4 Vd
Note:
Package marking provides orientation
and identification.
The INA-12063 is a unique RFIC
that combines the performance
flexibility of a discrete transistor
with the simplicity of using an
integrated circuit. Using a pat-
ented bias circuit, the perfor-
mance and operating current of
the INA-12063 can be adjusted
over the 1 to 10␣ mA range.
The INA-12063 is fabricated using
HP’s 30 GHz f_MAX ISOSAT™
Silicon bipolar process which
uses nitride self-alignment
submicrometer lithography,
trench isolation, ion implantation,
gold metalization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
5965-5365E
6-116