INA-03100 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – Low Noise, Cascadable Silicon Bipolar MMIC Amplifier

Low Noise, Cascadable Silicon
Bipolar MMIC Amplifier
Technical Data
INA-03100
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.5 dB Typical at 1.5 GHz
• High Gain:
26.0 dB Typical at 2.8 GHz
• 3 dB Bandwidth:
DC to 2.8 GHz
• Unconditionally Stable
(k>1)
• Low Power Consumption
Description
The INA-03100 is a low-noise
silicon bipolar Monolithic Micro-
wave Integrated Circuit (MMIC)
feedback amplifier chip. It is
designed for narrow or wide
bandwidth commercial, industrial
and military applications that
require high gain and low noise IF
or RF amplification with minimum
power consumption.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.^[1]
Chip Outline^[1]
C
RF
M
OUT
(3)
GND (2)
2
(4)
GND
(1)
1
RF
IN
Note:
1. See Application Note, “A005: Transistor
Chip Use” for additional information.
Typical Biasing Configuration
V_CC
RFC (Optional)
RF IN
C_block
4
3
1
2
R_bias
C_block
V_d = 5.5 V
(Nominal)
RF OUT
5965-9676E
6-102