INA-02100 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – Low Noise, Cascadable Silicon Bipolar MMIC Amplifier

Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02100
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 1.0 GHz
• Unconditionally Stable
(k>1)
Description
The INA-02100 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier chip. It is designed for
narrow or wide bandwidth indus-
trial and military applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.^[1]
Chip Outline^[1]
RF
OUT
GND
2
GND
1
RF
IN
Notes:
1. See Application Note, “A005:
Transistor Chip Use” for additional
information.
Typical Biasing Configuration
V_CC
RFC (Optional)
RF IN
C_block
4
3
1
2
R_bias
C_block
V_d = 5.5 V
(Nominal)
RF OUT
5965-9673E
6-90