HSDL-44XX Datasheet, PDF (1/19 Pages) Agilent(Hewlett-Packard) – High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package

High-Performance IR Emitter
and IR PIN Photodiode in
Subminiature SMT Package
Technical Data
HSDL-44xx IR Emitter
Series
HSDL-54xx IR Detector
Series
Features
• Subminiature Flat Top and
Dome Package
Size – 2x2 mm
• IR Emitter
875 nm TS AlGaAs
Intensity – 17 mW/sr
Speed – 40 ns
• Wide Range of Drive
Currents
500 µA to 500 mA
• IR Detector
PIN Photodiode
High Sensitivity
Speed – 7.5 ns
• Flexible Lead
Configurations
Surface Mount or
Through Hole
Applications
• Short Distance IR Links
• IrDA Compatible
• Small Handheld Devices
Pagers
Industrial Handhelds
• Diffuse LANs
• Wireless Audio
Description
Flat Top Package
The HSDL-4400 Series of flat top
IR emitters use an untinted,
nondiffused, truncated lens to
provide a wide radiation pattern
that is useful for short distance
communication where alignment
of the emitter and detector is not
critical. The HSDL-5400 Series of
flat top IR detectors uses the
same truncated lens design as the
HSDL-4400 Series of IR emitters
with the added feature of a black
tint that acts as an optical filter to
reduce the effects of ambient
light, such as sun, incandescent
and fluorescent light from
interfering with the IR signal.
Dome Package
The HSDL-4420 Series of dome
IR emitters uses an untinted,
nondiffused lens to provide a 24
degree viewing angle with high
on-axis intensity. The HSDL-5420
Series of IR detectors uses the
same lens design as the HSDL-
4420 IR emitter and optical filter
used in the HSDL-5400 IR
detector.
Lead Configuration
All of these devices are made by
encapsulating LED and PIN
photodiode chips on axial lead
frames to form molded epoxy
subminiature packages. A variety
of lead configurations is available
and includes: surface mount gull
wing, yoke lead, or Z-bend and
through hole lead bends at 2.54
mm (0.100 inch) center spacing.
Technology
The subminiature solid state
emitters utilize a highly optimized
LED material, transparent sub-
strate aluminum gallium arsenide,
TS AlGaAs. This material has a
very high radiant efficiency,
capable of producing high light
output over a wide range of drive
currents and temperature.