HSCH-9101 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – GaAs Beam Lead Schottky Barrier Diodes

Agilent HSCH-9101/9201/9251
GaAs Beam Lead Schottky
Barrier Diodes
Data Sheet
Description
The HSCH-9101 single, the
HSCH-9201 series pair, and the
HSCH-9251 anti-parallel pair are
advanced gallium arsenide
Schottky barrier diodes. These
devices are fabricated utilizing
molecular beam epitaxy (MBE)
manufacturing techniques and
feature rugged construction and
consistent electrical perfor-
mance. A polyimide coating
provides scratch protection and
resistance to contamination.
HSCH-9201
183 (7.2)
178 (7.0)
60 (2.4)
50 (2.0)
346 (13.6)
266 (10.5)
712 (28.0)
702 (27.6)
L = 0.1 nH
Features
• Gold tri-metal system for improved
reliability
• Low capacitance
• Low series resistance
• High cutoff frequency
• Polyimide passivation
• Multiple configurations
115 (4.5)
105 (4.1)
280 (11.0)
200 (7.8)
9 (0.4)
7 (0.3)
HSCH-9101
280 (11.0)
200 (7.8)
125 (4.9)
115 (4.5)
HSCH-9251 Junction Side Up
125 (4.9)
115 (4.5)
290±50 (11.0)
200 (7.8)
183 (7.2)
178 (7.0)
270 (10.6)
190 (7.5)
636 (25.0)
626 (24.6)
60 (2.4)
50 (2.0)
L = 0.1 nH
9 (0.4)
7 (0.3)
183 (7.2)
178 (7.0)
280±50 (10.6)
190 (7.5)
712 (28.0)
702 (27.6)
60 (2.4)
50 (2.0)
L = 0.1 nH
9 (0.4)
7 (0.3)
DIMENSIONS IN µm (1/1000 inch)