HL6340MG_08 Datasheet, PDF (1/5 Pages) Agilent(Hewlett-Packard) – Circular Beam Low Operating Current

HL6340MG/41MG
Circular Beam Low Operating Current
ODE-208-035A (Z)
Rev.1
Feb. 01, 2008
Description
The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These
products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
for laser levelers, laser scanners and optical equipment for measurement.
Features
• Optical output power: 5 mW CW
• Single longitudinal mode
• Visible light power: 635 nm Typ
• Low operating current: 25 mA Typ
• Low aspect ratio: 1.2 Typ
• Operating temperature: +50°C
• TM mode oscillation
Package Type
• HL6340MG/41MG: MG
Internal Circuit
• HL6340MG
1
3
Internal Circuit
• HL6341MG
1
3
PD
LD PD
LD
2
2
Absolute Maximum Ratings
Item
Symbol
Optical output power
P_O
Pulse optical output power
P_O(pulse)
LD reverse voltage
V_R(LD)
PD reverse voltage
V_R(PD)
Operating temperature
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings
5
6*
2
30
–10 to +50
–40 to +85
(T_C = 25°C)
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
(T_C = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
—
20
30
mA —
Slope efficiency
ηs
0.5
0.8
1.1
mW/mA 3 (mW) / (I_(4mW) – I_(1mW))
Operating current
I_OP
—
25
40
mA P_O = 5 mW
Operating voltage
V_OP
Lasing wavelength
λp
Beam divergence
θ//
parallel to the junction
—
2.4
2.7
V
P_O = 5 mW
630
635
640
nm P_O = 5 mW
13
17
25
°
P_O = 5 mW
Beam divergence
θ⊥
perpendicular to the junction
16
20
25
°
P_O = 5 mW
Aspect ratio
θ⊥/θ//
—
1.2
1.5
—
P_O = 5 mW
Monitor current
I_S
0.01
0.03
0.06
mA
P_O = 5 mW, V_R(PD) = 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as
by ESD.
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a
board.
Rev.1 Feb. 01, 2008 page 1 of 5