ATF10736 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – 0.5-12 GHz General Purpose Gallium Arsenide FET

0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-10736
Features
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• Low Bias:
V_DS = 2 V, I_DS= 25␣ mA
• High Output Power:
20.0␣ dBm typical P _{1 dB} at 4␣ GHz
• Low Noise Figure:
1.2␣ dB Typical at 4␣ GHz
Description
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
36 micro-X Package
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available ^[1]
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
NF_O Optimum Noise Figure: V_DS = 2 V, I_DS = 25 mA
f = 2.0 GHz dB
f = 4.0 GHz dB
f = 6.0 GHz dB
0.9
1.2 1.4
1.4
G_A
Gain @ NFO; V_DS = 2 V, I_DS = 25 mA
f = 2.0 GHz dB
16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB
10.5
P_{1 dB}
Power Output @ 1 dB Gain Compression
V_DS = 4 V, I_DS = 70 mA
f = 4.0 GHz dBm
G_{1 dB} 1 dB Compressed Gain: V_DS = 4 V, I_DS = 70 mA
f = 4.0 GHz dB
g_m
Transconductance: V_DS = 2 V, V_GS = 0 V
mmho 70
I_DSS
Saturated Drain Current: V_DS = 2 V, V_GS = 0 V
mA 70
V_P
Pinchoff Voltage: V_DS = 2 V, I_DS = 1 mA
V -4.0
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
20.0
12.0
140
130 180
-1.3 -0.5
5-29
5965-8698E