ATF-541M4 Datasheet, PDF (1/16 Pages) Agilent(Hewlett-Packard) – Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package

Agilent ATF-541M4 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Description
Agilent Technologies’s
ATF-541M4 is a high linearity,
low noise, single supply
E-PHEMT housed in a miniature
leadless package.
The ATF-541M4’s small size and
low profile makes it ideal for the
design of hybrid module and
other space-constraint devices.
The device can be used in appli-
cations such as TMA and front
end LNA for Cellular/PCS and
WCDMA base stations, LNA and
driver amplifiers for Wireless
Data and 802.11b WLAN.
In addition, the device’s superior
RF performance at higher
frequency makes it an ideal
candidate for high frequency
applications such as WLL,
802.11a WLAN, 5–6 GHz UNII
and HIPERLAN applications.
MiniPak 1.4 mm x 1.2 mm Package
Rx
Pin Connections and
Package Marking
Source
Pin 3
Gate
Pin 2
Rx
Drain
Pin 4
Source
Pin 1
Note:
Top View. Package marking provides orientation,
product identification and date code.
“R” = Device Type Code
“x” = Date code character. A different
character is assigned for each month and
year.
Features
• High linearity performance
• Single Supply Enhancement Mode
Technology^[1]
• Very low noise figure
• Excellent uniformity in product
specifications
• 800 micron gate width
• Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-Reel packaging option
available
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 35.8 dBm output 3^rd order intercept
• 21.4 dBm output power at 1 dB gain
compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier and Driver
Amplifier for Cellular/PCS and
WCDMA Base Stations
• LNA and Driver Amplifier for
WLAN, WLL/RLL and MMDS
applications
• General purpose discrete E-PHEMT
for ultra low noise applications in
the 450 MHz to 10 GHz frequency
range
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.