ATF-46101 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 2-10 GHz Medium Power Gallium Arsenide FET

2 – 10 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-46101
Features
• High Output Power:
27.0␣ dBm Typical P _1dB at 4␣ GHz
• High Gain at 1 dB
Compression:
12.0␣ dB Typical G _1dB at 4␣ GHz
• High Power Efficiency:
38% Typical at 4␣ GHz
Description
The ATF-46101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 10 GHz frequency
range. This nominally 0.5␣ micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 1.25␣ millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
100 mil Flange Package
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions^[1]
Units
P_{1 dB}
G_{1 dB}
Power Output @ 1 dB Gain Compression:
V_DS = 9 V, I_DS = 125 mA
1 dB Compressed Gain: V_DS = 9 V, I_DS = 125 mA
f = 4.0 GHz
f = 8.0 GHz
f = 4.0 GHz
f = 8.0 GHz
dBm
dB
η_add
Efficiency @ P_1dB: V_DS = 9 V, I_DS = 125 mA
f = 4.0 GHz %
g_m
Transconductance: V_DS = 2.5 V, I_DS = 125 mA
mmho
I_DSS
Saturated Drain Current: V_DS = 2.5 V, V_GS = 0 V
mA
V_P
Pinch-off Voltage: V_DS = 2.5 V, I_DS = 5 mA
V
Note:
1. RF Performance is determined by packaging and testing 10 samples per wafer.
Min.
25.0
9.0
200
-5.4
Typ.
27.0
26.5
10.0
5.0
38
100
330
-3.5
Max.
450
-2.0
5965-8731E
5-98