ATF-45171 Datasheet, PDF (1/3 Pages) Agilent(Hewlett-Packard) – 2-8 GHz Medium Power Gallium Arsenide FET

2 – 8 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-45171
Features
• High Output Power:
29.0␣ dBm Typical P _1dB at 4␣ GHz
• High Gain at 1dB
Compression:
10.5 dB Typical G_{1 dB} at 4␣ GHz
• High Power Efficiency:
38% Typical at 4␣ GHz
• Hermetic Metal-Ceramic
Stripline Package
Description
The ATF-45171 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 8 GHz frequency
range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
70 mil Flange Package
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
P_{1 dB}
G_{1 dB}
Power Output @ 1 dB Gain Compression:
V_DS = 9 V, I_DS = 250 mA
1 dB Compressed Gain: V_DS = 9 V, I_DS = 250 mA
η_add
Efficiency @ P1 dB: V_DS = 9 V, I_DS = 250 mA
g_m
Transconductance: V_DS = 2.5 V, I_DS = 250 mA
I_DSS
Saturated Drain Current: V_DS = 1.75 V, V_GS = 0 V
V_P
Pinch-off Voltage: V_DS = 2.5 V, I_DS =12.5 mA
Units Min. Typ. Max.
f = 4.0 GHz dBm 28.0 29.0
f = 8.0 GHz
28.0
f = 4.0 GHz dB 9.5 10.5
f = 8.0 GHz
4.5
f = 4.0 GHz %
38
mmho
200
mA 400 600 800
V -5.4 -4.0 -2.0
5-95
5965-8734E